NX29F010 Ver la hoja de datos (PDF) - NexFlash -> Winbond Electronics

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NX29F010

1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY

NexFlash -> Winbond Electronics 

NX29F010

Executing the Erase Command Sequence invokes the

Embedded Erase Algorithm, an internal algorithm that

automatically pre-programs the array to all zeros (if it is not

already programmed) before executing the erase operation.

During erase, the device automatically times the erase

pulse widths and verifies proper cell margin during erase.

By reading the DQ7 (Data Polling) and DQ6 (toggle) status

bits, the host system can detect whether a program or erase

operation is complete. After completion, the device is ready

to read array data or accept another command.

The sector erase architecture is designed to allow memory

sectors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is erased

before it is shipped to customers.

The hardware data protection includes a low Vcc detector

that automatically inhibits write operations during power

transitions. The hardware sector protection feature will

disable both program and erase operations in any combina-

tion of the sectors of memory, and is implemented using

standard EPROM programming algorithm.

The device electrically erases all bits within a sector

simultaneously via Fowler-Nordheim tunneling. Data are

programmed one byte at a time using the EPROM program-

ming algorithm of hot electron injection.

VCC

GND

WE

CE

OE

A0-A16

STATE

CONTROL

COMMAND

REGISTER

VCC

DETECTOR

ERASE VOLTAGE

GENERATOR

DQ7-DQ0

8

INPUT/OUTPUT

BUFFERS

PGM VOLTAGE

GENERATOR

STB

TIMER

8

8

8

STB

CHIP ENABLE/

OUTPUT ENABLE

LOGIC

DATA

LATCH

8

8

Y-DECODER

Y-GATING

X-DECODER

CELL

MATRIX

Figure 1. NX29F010 Block Diagram

2

NexFlash Technologies, Inc.

NXPF001F-0600

06/22/00 ©

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