NX29F010-35W Ver la hoja de datos (PDF) - NexFlash -> Winbond Electronics

Número de pieza

componentes Descripción

Fabricante

NX29F010-35W

1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY

NexFlash -> Winbond Electronics 

NX29F010

ADDRESS

CE

OE

WE

PROGRAM COMMAND SEQUENCE (Last Two Cycles)

tWC

tAS

555H

PA

tAH

tCH

tGHWL

tWPH

tWP

READ STATUS DATA (Last Two Cycles)

PA

PA

tWHWH1

tCS

DATA

tDS

A0H

tDH

PD

STATUS

DOUT

tVCS

Vcc

Note:

Figure 13. AC Waveform: Program Operation

1. PA = Program Address, PD = Program Data, DOUT is the true data at the Program Address.

ADDRESS

CE

OE

WE

DATA

Vcc

ERASE COMMAND SEQUENCE (Last Two Cycles)

tWC

2AAH

tAS

SA

(555H FOR CHIP ERASE)

tAH

tCH

tGHWL

tWPH

tWP

tCS

tDS

55H

tVCS

tDH

30H

10H FOR

CHIP ERASE

READ STATUS DATA

VA

VA

tWHWH2

IN

PROGRESS

COMPLETE

Figure 14. AC Waveform: Erase Operation

Note:

1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operation Status").

NexFlash Technologies, Inc.

17

NXPF001F-0600

06/22/00 ©

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