HGTG34N100E2 Ver la hoja de datos (PDF) - Intersil
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HGTG34N100E2 Datasheet PDF : 5 Pages
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Specifications HGTG34N100E2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Voltage
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
BVCES
IC = 250µA, VGE = 0V
1000
-
-
V
ICES
VCE = BVCES
TC = +25oC
-
-
1.0
mA
VCE = 0.8 BVCES TC = +125oC
-
-
4.0
mA
VCE(SAT)
IC = IC90,
VGE = 15V
TC = +25oC
-
2.8
3.2
V
TC = +125oC
-
2.8
3.1
V
IC = IC90,
VGE = 10V
TC = +25oC
-
2.9
3.3
V
TC = +125oC
-
3.0
3.4
V
VGE(TH)
IC = 1mA,
VCE = VGE
TC = +25oC
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±500
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
-
7.3
-
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
185
240
nC
-
240
315
nC
Current Turn-On Delay Time
Current Rise Time
tD(ON)I
tRI
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 15V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
Current Turn-Off Delay Time
tD(OFF)I
-
610
795
ns
Current Fall Time
tFI
-
710
925
ns
Turn-Off Energy (Note 1)
WOFF
-
7.1
-
mJ
Current Turn-On Delay Time
Current Rise Time
tD(ON)I
tRI
L = 50µH, IC = IC90, RG = 25Ω,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BVCES
-
100
-
ns
-
150
-
ns
Current Turn-Off
tD(OFF)I
-
460
600
ns
Current Fall Time
tFI
-
670
870
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
-
6.5
-
mJ
-
0.5
0.6
oC/W
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3-125
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