DCR1476SY Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1476SY Datasheet PDF : 8 Pages
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DCR1476SY
100000
IT
QS
tp
dI/dt
IRM
10000
IT = 2000A
1000
0.1
Conditions:
Tj = 125˚C
QS is total integral stored charge
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
Table gives pulse power PGM in Watts
VFGM
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
10
100W
50W
20W
10W
5W
2W
Upper limit 99%
1
Lower limit 1%
0.1
0.001
0.01
0.1
1
10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
0.1
60
I2t = Î2 x t
2
Anode side cooled
50
0.01
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0.1
1
Time - (s)
10
100
Fig.6 Transient thermal impedance - junction to case
40
4.4
4.0
30
3.6
3.2
I2t
2.8
20
2.4
2.0
10
1.6
1
10 1 2 3 45 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRSM at Tcase = 125˚C)
6/8
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