DCR1476SY35 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DCR1476SY35

Phase Control Thyristor

Dynex Semiconductor 

DCR1476SY

DYNAMIC CHARACTERISTICS

Symbol

IRRM/IDRM

dV/dt

dI/dt

VT(TO)

rT

tgd

t

q

I

L

I

H

Parameter

Conditions

Typ.

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

-

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

Rate of rise of on-state current

From 67% VDRM to 1000A Repetitive 50Hz -

Gate source 20V, 10Ω

tr ≤ 0.5µs, Tj = 125oC

Non-repetitive -

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Turn-off time

At Tvj = 125oC

-

VD = 67% VDRM, Gate source 30V, 15Ω

tr = 0.5µs, Tj = 25oC

-

IT = 1000A, tp = 1ms, Tj = 125˚C,

V

R

=

50V,

dI /dt

RR

=

2A/µs,

600

V

DR

=

67%

V,

DRM

dV /dt

DR

=

8V/µs

linear

Latching current

T = 25oC, V = 5V

300

j

D

Holding current

T

j

=

25oC,

R

g-k

=

∞

-

Max. Units

250 mA

1000 V/µs

150 A/µs

300 A/µs

1.03 V

0.32 mΩ

2.5

µs

800 µs

1000 mA

500 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

V

GD

V

FGM

VFGN

V

RGM

IFGM

P

GM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At V T = 125oC

DRM case

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

4.0

V

400 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/8

www.dynexsemi.com

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