DCR1476SY37 Ver la hoja de datos (PDF) - Dynex Semiconductor

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DCR1476SY37

Phase Control Thyristor

Dynex Semiconductor 

DCR1476SY

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 125oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

V =0

R

Max. Units

29.0

kA

4.21 x 106 A2s

36.25

kA

6.57 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 43.0kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0095 oC/W

- 0.019 oC/W

- 0.019 oC/W

- 0.002 oC/W

- 0.004 oC/W

-

135

oC

-

125

oC

–55 125

oC

38.0 47.0 kN

3/8

www.dynexsemi.com

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