GP800NSS33 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP800NSS33 Datasheet PDF : 9 Pages
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GP800NSS33
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
1600
1400
1200
1000
Tj = 25˚C
Tj = 125˚C
800
600
400
200
0
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Fig.5 Diode typical forward characteristics
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge = ±15V
200
Rg(ON) = 3.3Ω
Rg(OFF) = 6.8Ω
CGE = 440nF
0
0
500 1000 1500 2000 2500 3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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