ACR300SG33 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
ACR300SG33 Datasheet PDF : 7 Pages
| |||
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
ACR300SG33
Symbol
Parameter
Test Conditions
VTM
Maximum on-state voltage
At 1000A peak, Tcase = 25° C
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To VD = 2000V, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From VDRM to 125A
Gate source 30V, 10Ω,
Gate rise time tr ≤ 100ns, Tj = 125°C
VT(TO)
rT
Threshold voltage
On-state slope resistance
tgd
Delay time
tr
Rise time
IL
Latching current
IH
Holding current
Tvj = 125°C
Tvj = 125°C
VD = 3000V, gate source 30V, 10Ω
Gate rise time tr = 100ns, Tj = 25°C
As defined in Figure 2
Tj = 25°C
Tj = 25°C, V D = 5V
Tj = 25°C, R G-K = ∞, ITM = 500A, IT = 5A
Min. Max. Units
-
-
3000
2.0
V
60
mA
V/µs
2000 A/µs
-
1.19
V
-
0.81
mΩ
-
350
ns
50
ns
-
600
mA
-
300
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I GT
V FGM
V RGM
I FGM
P GM
P G(AV)
Gate trigger voltage
Gate trigger current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Test Conditions
VDWM = 12V, RL = 6Ω Tcase = 25°C
VDWM = 12V, RL = 6Ω Tcase = 125°C
Average time 10ms max
Max. Units
5
V
500 mA
40
V
10
V
20
A
40
W
10
W
3/7
www.dynexsemi.com
Share Link: 