DAT114WE Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
DAT114WE Datasheet PDF : 4 Pages
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Transistors
DTA114WE / DTA114WUA / DTA114WKA / DTA114WSA
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Power
dissipation
DTA114WE
DTA114WUA / DTA114WKA
DTA114WSA
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCC
−50
V
VI
−30 to +10
V
IO
IC(Max.)
−100
mA
−100
150
Pd
200
mW
300
Tj
150
°C
Tstg
−55 to +150
°C
zPackage, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA114WE
EMT3
74
TL
3000
DTA114WUA
UMT3
74
T106
3000
DTA114WKA
SMT3
74
T146
3000
DTA114WSA
SPT
A114WS
TP
5000
zExternal characteristics (Unit: mm)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗Transition frequency of the device.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
−
−3
−
−
−
24
7
0.37
−
Typ. Max. Unit
Conditions
−
−0.8
V
VCC= −5V , IO= −100µA
−
−
VO= −0.3V , IO= −2mA
−0.1 −0.3
V IO= −10mA , II= −0.5mA
− −0.88 mA VI= −5V
−
−0.5 µA VCC= −50V , VI=0V
−
−
− IO= −10mA , VO= −5V
10
13
kΩ
−
0.47 0.57
−
−
250
−
MHz VCE= −10V , IE=5mA , f=100MHz ∗
Rev.A
2/3
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