D2225 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

Fabricante

D2225

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

D2225UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

PER SIDE

BVDSS

Drain–Source Breakdown

Voltage

VGS = 0

ID = 10mA

40

IDSS

Zero Gate Voltage

Drain Current

VDS = 12.5V

VGS = 0

IGSS

VGS(th)

gfs

Gate Leakage Current

Gate Threshold Voltage*

Forward Transconductance*

GPS

η

VSWR

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

VDS = 0

VDS = VGS

ID = 0.2A

TOTAL DEVICE

PO = 5W

VDS = 12.5V

f = 1GHz

IDQ = 0.2A

0.5

0.18

10

40

20:1

Ciss

Coss

Crss

PER SIDE

Input Capacitance

VDS = 0V VGS = –5V f = 1MHz

Output Capacitance

VDS = 12.5V VGS = 0 f = 1MHz

Reverse Transfer Capacitance VDS = 12.5V VGS = 0 f = 1MHz

Typ.

Max. Unit

V

1

mA

1

µA

7

V

S

dB

%

—

12

pF

10

pF

1

pF

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Max. 6°C / W

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk

Prelim. 2/99

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