CY62256V Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY62256V Datasheet PDF : 12 Pages
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CY62256V
Capacitance[5]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Thermal Resistance
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)[6]
Thermal Resistance
(Junction to Case)[5]
AC Test Loads and Waveforms
Test Conditions
TA = 25°C, f = 1 MHz, VCC = VCC(typ.)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
Max.
Unit
6
pF
8
pF
SOIC
68.45
26.94
TSOPI RTSOPI Unit
87.62 87.62 °C/W
23.73 23.73 °C/W
VCC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R1
R2
VCC
GND
10%
< 5 ns
ALL INPUT PULSES
90%
90%
10%
< 5 ns
Equivalent to:
THEVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameter
R1
R2
RTH
VTH
3.3V
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions[6]
Min. Typ.[2] Max.
Unit
VDR
ICCDR
VCC for Data Retention
1.4
V
Data Retention Current
VCC = 1.4V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Com’l
Ind’l
0.1
3
µA
0.1
6
tCDR[6]
tR[6]
Chip Deselect to Data
Retention Time
Operation Recovery Time
Auto
0.1
50
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
VCC
VCC(min)
VDR > 1.4V
VCC(min)
tCDR
tR
CE
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed VCC + 0.3V.
Document #: 38-05057 Rev. *F
Page 4 of 12
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