CY7C1399-15ZI Ver la hoja de datos (PDF) - Cypress Semiconductor

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componentes Descripción

Fabricante

CY7C1399-15ZI

32K x 8 3.3V Static RAM

Cypress Semiconductor 

CY7C1399

Electrical Characteristics Over the Operating Range(continued)

Parameter

VOH

VOL

VIH

Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Test Conditions

VCC = Min., IOH = –2.0 mA

VCC = Min., IOL = 4.0 mA

VIL

Input LOW Voltage

IIX

Input Load Current

IOZ

Output Leakage Current GND ≤ VI ≤ VCC,

Output Disabled

IOS

Output Short Circuit

Current[2]

VCC = Max., VOUT = GND

ICC

VCC Operating

Supply Current

VCC = Max., IOUT = 0 mA,

f = fMAX = 1/tRC

ISB1

Automatic CE Power-Down Max. VCC, CE ≥ VIH,

Current — TTL Inputs

VIN ≥ VIH, or VIN ≤ VIL,

f = fMAX

L

ISB2

Automatic CE Power-Down

Current — CMOS Inputs[3]

Max. VCC, CE ≥ VCC–0.3V, VIN ≥

VCC – 0.3V, or VIN ≤ 0.3V,

WE≥VCC–0.3V or WE≤ 0.3V,

L

f=fMAX

7C1399–25

Min. Max.

2.4

0.4

2.2

VCC

+0.3V

–0.3 0.8

–1

+1

–5

+5

7C1399–35

Min. Max.

2.4

0.4

2.2

VCC

+0.3V

–0.3 0.8

–1

+1

–5

+5

Unit

V

V

V

V

µA

µA

–300

–300 mA

45

40

mA

5

5

mA

3

3

mA

500

500

µA

50

50

µA

Capacitance[4]

Parameter

CIN: Addresses

CIN: Controls

COUT

Description

Test Conditions

Max.

Unit

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 3.3V

5

pF

6

pF

Output Capacitance

6

pF

AC Test Loads and Waveforms

3.3V

OUTPUT

R1 317Ω

CL

INCLUDING

JIG AND

SCOPE

R2

351Ω

Equivalent to: THÉVENIN EQUIVALENT

OUTPUT

167Ω

1.73V

3.0V

GND

10%

≤ 3 ns

Note:

4. Tested initially and after any design or process changes that may affect these parameters.

ALL INPUT PULSES

90%

90%

10%

≤ 3 ns

C1399–4

3

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