MCM69P536C Ver la hoja de datos (PDF) - Motorola => Freescale
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MCM69P536C Datasheet PDF : 12 Pages
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ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6 V
Voltage Relative to VSS for Any
Pin Except VDD
Vin, Vout
– 0.5 to 6.0
V
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation (See Note 2)
PD
1.6
W
Temperature Under Bias
Tbias
– 10 to 85
°C
Storage Temperature
Tstg
– 55 to 125
°C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit Notes
Thermal Resistance Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
RθJA
40
°C/W 1, 2
25
Thermal Resistance Junction to Board (Bottom)
RθJB
17
°C/W 1, 3
Thermal Resistance Junction to Case (Top)
RθJC
9
°C/W 1, 4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method
1012.1).
MCM69P536C
6
MOTOROLA FAST SRAM
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