CY7C199D-10VXI Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY7C199D-10VXI Datasheet PDF : 12 Pages
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CY7C199D
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min
VDR
ICCDR
tCDR [3]
tR [12]
VCC for Data Retention
Data Retention Current
2.0
VCC = VDR = 2.0V, CE > VCC – 0.3V, Industrial
VIN > VCC – 0.3V or VIN < 0.3V
Automotive-E
Chip Deselect to Data Retention Time
0
Operation Recovery Time
tRC
Data Retention Waveform
Max Unit
V
3
mA
15 mA
ns
ns
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
4.5V
tCDR
tR
CE
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [13, 14]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [14, 15]
tRC
CE
tACE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 μs or stable at VCC(min) > 50 μs.
13. Device is continuously selected. OE, CE = VIL.
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05471 Rev. *E
Page 6 of 12
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