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CY7C199D(2007) Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza
componentes Descripción
Fabricante
CY7C199D
(Rev.:2007)
Cypress
Cypress Semiconductor Cypress
CY7C199D Datasheet PDF : 0 Pages
CY7C199D
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND [2] ... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [2] ...................................–0.5V to VCC + 0.5V
DC Input Voltage [2] ............................... –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Industrial –40°C to +85°C 5V ± 0.5V
Speed
10 ns
Electrical Characteristics (Over the Operating Range)
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage [2]
VIL
Input LOW Voltage [2]
IIX
Input Leakage Current
IOZ
Output Leakage Current
ICC
VCC Operating Supply Current
ISB1
Automatic CE
Power-down Current— TTL Inputs
ISB2
Automatic CE
Power-down Current— CMOS Inputs
Test Conditions
IOH=–4.0 mA
IOL=8.0 mA
GND < VI < VCC
GND < VO < VCC, Output Disabled
VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
100 MHz
83 MHz
66 MHz
40 MHz
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fmax
Max VCC, CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V, f = 0
7C199D-10
Min
Max Unit
2.4
V
0.4
V
2.0 VCC + 0.5 V
–0.5
0.8
V
–1
+1
µA
–1
+1
µA
80
mA
72
mA
58
mA
37
mA
10
mA
3
mA
Note:
2. VIL(min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
Document #: 38-05471 Rev. *D
Page 3 of 10
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