CY7C199D(2007) Ver la hoja de datos (PDF) - Cypress Semiconductor

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CY7C199D
(Rev.:2007)

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY7C199D

Document History Page

Document Title: CY7C199D, 256K (32K x 8) Static RAM

Document Number: 38-05471

REV.

Orig. of

ECN NO. Issue Date Change

Description of Change

**

201560 See ECN SWI Advance Information data sheet for C9 IPP

*A

233728 See ECN RKF DC parameters modified as per EROS (Spec # 01-02165)

Pb-free Offering in Ordering Information

*B

262950 See ECN RKF Removed 28-LCC Pinout and Package Diagrams

Added Data Retention Characteristics table

Added Tpower Spec in Switching Characteristics table

Shaded Ordering Information

*C

307594 See ECN RKF Reduced Speed bins to -10, -12 and -15 ns

*D

820660 See ECN VKN Converted from Preliminary to Final

Removed 12 ns and 15 ns speed bin

Removed Commercial Operating range

Removed “L” part

Removed 28-pin PDIP and 28-pin SOIC package

Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2

Changed ICC spec from 60 mA to 80 mA for 100 MHz speed bin

Added ICC specs for 83 MHz, 66 MHz and 40 MHz speed bins

Updated Thermal Resistance table

Updated Ordering Information Table

Document #: 38-05471 Rev. *D

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