CY7C199CN(2011) Ver la hoja de datos (PDF) - Cypress Semiconductor

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componentes Descripción

Fabricante

CY7C199CN
(Rev.:2011)

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY7C199CN

DC Electrical Characteristics

Over the Operating Range (–15, –20) [2]

Parameter

Description

Condition

–15

–20

Unit

Min Max Min Max

VIH

Input HIGH Voltage

2.2 VCC + 0.3 2.2 VCC + 0.3 V

VIL

Input LOW Voltage

–0.5

0.8

–0.5

0.8

V

VOH

Output HIGH Voltage VCC = Min, IOH = –4.0 mA

2.4

–

2.4

–

V

VOL

Output LOW Voltage VCC = Min, IOL = 8.0 mA

–

0.4

–

0.4

V

ICC

VCC Operating Supply VCC = Max, IOUT = 0 mA,

Current

f = Fmax = 1/tRC

–

80

–

75

mA

ISB1

Automatic CE Power Max VCC, CE ≥ VIH,

–

30

–

30

mA

Down Current TTL

Inputs

VIN ≥ VIH or VIN ≤ VIL, f = Fmax

–

10

–

10

mA

ISB2

Automatic CE Power Max VCC, CE ≥ VCC – 0.3 V,

–

10

–

10

mA

Down Current CMOS VIN ≥ VCC – 0.3 V, or VIN ≤ 0.3 V, f = 0

Inputs

–

500

–

500

μA

IOZ

Output Leakage

GND ≤ VI ≤ VCC, Output Disabled

–5

+5

–5

+5

μA

Current

IIX

Input Leakage Current GND ≤ VI ≤ VCC

–5

+5

–5

+5

μA

Capacitance [3]

Parameter

Description

CIN

COUT

Input Capacitance

Output Capacitance

Thermal Resistance [3]

Parameter

Description

ΘJA Thermal Resistance

(junction to ambient)

ΘJC Thermal Resistance

(junction to case)

Conditions

TA = 25°C, f = 1 MHz, VCC = 5.0 V

Conditions

Still air, soldered on a 3 × 4.5

square inch, two–layer printed

circuit board

TSOP I

88.6

21.94

Max

8

8

SOJ

79

41.42

DIP

69.33

31.62

Unit

pF

Unit

°C/W

Note

2. VIL (min) = –2.0 V for pulse durations of less than 20 ns.

Document #: 001-06435 Rev. *E

Page 5 of 18

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