CY7C1340F-133AI Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY7C1340F-133AI Datasheet PDF : 17 Pages
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CY7C1340F
Electrical Characteristics Over the Operating Range[8, 9]
Parameter
Description
Test Conditions
Min. Max. Unit
ISB2
Automatic CE
VDD = Max., Device Deselected, All speeds
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs
f=0
40
mA
ISB3
Automatic CE
VDD = Max., Device Deselected, 4-ns cycle, 250 MHz
Power-down
Current—CMOS Inputs
or VIN ≤ 0.3V or VIN > VDDQ –
0.3V, f = fMAX = 1/tCYC
4.4-ns cycle, 225 MHz
5-ns cycle, 200 MHz
105
mA
100
mA
95
mA
6-ns cycle, 166 MHz
85
mA
7.5-ns cycle, 133 MHz
75
mA
10-ns cycle, 100 MHz
65
mA
ISB4
Automatic CE Power-down VDD = Max., Device Deselected, All speeds
Current—TTL Inputs
VIN ≥ VIH or VIN ≤ VIL, f = 0
45
mA
Thermal Characteristics[10]
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
TQFP
Package
41.83
9.99
Capacitance[10]
Parameter
Description
Test Conditions
CIN
CCLK
CI/O
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V
VDDQ = 3.3V
Note:
10. Tested initially and after any design or process change that may affect these parameters.
Max.
5
5
5
Unit
°C/W
°C/W
Unit
pF
pF
pF
Document #: 38-05219 Rev. *A
Page 9 of 17
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