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CY7C1212H-133AXI Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza
componentes Descripción
Fabricante
CY7C1212H-133AXI
Cypress
Cypress Semiconductor Cypress
CY7C1212H-133AXI Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Switching Characteristics Over the Operating Range[11, 12]
Parameter
Description
tPOWER
VDD(Typical) to the First Access[13]
Clock
tCYC
Clock Cycle Time
tCH
Clock HIGH
tCL
Clock LOW
Output Times
tCO
Data Output Valid after CLK Rise
tDOH
tCLZ
tCHZ
Data Output Hold after CLK Rise
Clock to Low-Z[14, 15, 16]
Clock to High-Z[14, 15, 16]
tOEV
tOELZ
tOEHZ
OE LOW to Output Valid
OE LOW to Output Low-Z[14, 15, 16]
OE HIGH to Output High-Z[14, 15, 16]
Set-up Times
tAS
Address Set-up before CLK Rise
tADS
ADSC, ADSP Set-up before CLK Rise
tADVS
ADV Set-up before CLK Rise
tWES
GW, BWE, BW[A:B] Set-up before CLK Rise
tDS
Data Input Set-up before CLK Rise
tCES
Chip Enable Set-Up before CLK Rise
Hold Times
tAH
tADH
tADVH
tWEH
tDH
tCEH
Address Hold after CLK Rise
ADSP, ADSC Hold after CLK Rise
ADV Hold after CLK Rise
GW, BWE, BW[A:B] Hold after CLK Rise
Data Input Hold after CLK Rise
Chip Enable Hold after CLK Rise
CY7C1212H
166 MHz
133 MHz
Min. Max. Min. Max. Unit
1
1
ms
6.0
7.5
ns
2.5
3.0
ns
2.5
3.0
ns
3.5
4.0
ns
1.5
1.5
ns
0
0
ns
3.5
4.0
ns
3.5
4.5
ns
0
0
ns
3.5
4.0
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
Notes:
11. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
12. Test conditions shown in (a) of AC Test Loads unless otherwise tested.
13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation
can be initiated.
14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
16. This parameter is sampled and not 100% tested.
Document #: 38-05668 Rev. *B
Page 9 of 15

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