FD0230YR00AM Ver la hoja de datos (PDF) - Formosa Technology

Número de pieza

componentes Descripción

Fabricante

FD0230YR00AM

DIAC

Formosa Technology 

FD0230YR

DIAC

Dimensions in mm.

DO-35

Glass Axial

Package

• Silicon bi-directional trigger device

intended for use in thyristor (SCR and

TRIAC) trigger circuits, industrial &

commercial equipment, lamp dimmer

circuits, universal motor speed controls,

heat controls.

3.60 ± 0.55

54.4 ± 0.55

Mounting instructions

1. Min. distance from body to soldering point,

4 mm.

2. Max. solder temperature, 250 °C.

3. Max. soldering time, 3.5 sec.

4. Do not bend lead at a point closer than

2 mm. to the body.

BREAKOVER VOLTAGE ON-STATE CURRENT

32 V

2.0 Amps

SPECIAL FEATURES:

• Low breakover current.

• Excellent symmetry.

• Very low leakage current.

MARKING CODE

P2

Absolute Maximum Ratings, according to IEC publication No. 134

PARAMETER

CONDITIONS

Ptot

Total Power Dissipation

Ta = 65 ºC

ITRM

Repetitive peak on-state current tp = 20 µs, f = 100 Hz

Tstg

Storage Temperature Range

Tj

Operating Junction Temperature

Min. Typ. Max. Unit

150 mW

2

A

-40

+125 ºC

-40

+125 ºC

Thermal Resistance

R th (j-a)

R th (j-l)

PARAMETER

Junction to Ambient

Junction to leads

CONDITIONS

Min. Typ. Max. Unit

400

ºC/W

150

ºC/W

Electrical Characteristics at Tamb = 25 ºC

VBO

VBO+ - -VBO-

∆V±

PARAMETER

Breakover Voltage *

Breakover Voltage Symmetry

Dynamic breakover voltage *

VO

Output Voltage *

IBO

Breakover Current *

tr

Rise Time *

IB

Leakage Current *

IP

Peak Current *

* Applicable to both forward and reverse directions.

** Connected in parallel with the devices.

CONDITIONS

Min. Typ. Max. Unit

IBO, C = 22nF ** (see Figure 1) 28

32 36

V

IBO, C = 22nF ** (see Figure 1)

±3

V

∆I = [IBO to IF = 10 mA]

5

V

(see Figure 1)

(see Figure 3)

5

V

C = 22 nF **

(see Figure 4)

100 µA

1.5

µs

VB = 0.5 VBO max

(see Figure 1)

10 µA

see Figure 3 (Gate)

0.3

A

Feb - 03

Share Link: