M27V322-100P6 Ver la hoja de datos (PDF) - STMicroelectronics
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M27V322-100P6 Datasheet PDF : 13 Pages
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M27V322
Table 7. Read Mode DC Characteristics (1)
(TA = –40 to 85 °C or 0 to 70 °C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
ILO Output Leakage Current
0V ≤ VOUT ≤ VCC
ICC Supply Current
E = VIL, GVPP = VIL, IOUT = 0mA,
f = 5MHz
ICC1 Supply Current (Standby) TTL
E = VIH
ICC2 Supply Current (Standby) CMOS
E > VCC – 0.2V
IPP Program Current
VPP = VCC
VIL Input Low Voltage
–0.6
VIH (2) Input High Voltage
0.7VCC
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage TTL
IOH = –400µA
2.4
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±1
±10
30
1
60
10
0.2VCC
VCC + 0.5
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
Table 8. Read Mode AC Characteristics (1)
(TA = –40 to 85 °C or 0 to 70 °C; VCC = 3.3V ± 10%; VPP = VCC)
M27V322
Symbol Alt
Parameter
Test Condition -100 (3)
-120
-150 Unit
Min Max Min Max Min Max
tAVQV tACC Address Valid to Output Valid
E = VIL, G = VIL
100
120
150 ns
tELQV tCE Chip Enable Low to Output Valid
G = VIL
100
120
150 ns
tGLQV
tOE
Output Enable Low to Output
Valid
E = VIL
50
60
60 ns
tEHQZ (2) tDF Chip Enable High to Output Hi-Z
G = VIL
0 45 0 50 0 50 ns
tGHQZ (2)
tDF
Output Enable High to Output
Hi-Z
E = VIL
0 45 0 50 0 50 ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL 5
5
5
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed measurement conditions.
5/13
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