DFB5430 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DFB5430

Fast Recovery Diode

Dynex Semiconductor 

DFB54

4/7

500

Measured under

pulse conditions

400

300

Tj = 150˚C

200

Tj = 25˚C

100

0

0.8

1.0

1.2

1.4

1.6

Instantaneous forward voltage VF - (V)

Fig.2 Maximum (limit) forward characteristics

100000

10000

1000

100

1

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

D

E

Conditions:

Tj = 150˚C,

VR = 100V

A

B

C

A: IF = 4000A

B: IF = 2000A

C: IF = 1000A

D: IF = 500A

E: IF = 200A

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.3 Recovered charge

1000

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