DFB5431 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DFB5431 Datasheet PDF : 7 Pages
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DFB54
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
20.0
kA
2000 x 103 A2s
16
kA
1280 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
Single side cooled
Clamping force 44kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Min. Max. Units
- 0.013 oC/W
- 0.025 oC/W
- 0.027 oC/W
- 0.003 oC/W
- 0.006 oC/W
-
150
oC
-55 150
oC
39.6 48.4 kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
I
Peak reverse current
RRM
t
rr
Reverse recovery time
QRA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
V
TO
rT
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 1500A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 1000A, diRR/dt = 100A/µs
Tcase = 150oC, VR = 100V
At Tvj = 150oC
At Tvj = 150oC
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
-
1.7
V
-
100 mA
-
6.5 µs
- 1500 µC
-
450
A
-
-
-
-
1.15 V
-
0.32 mΩ
-
-
V
2/7
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