CY22801 Ver la hoja de datos (PDF) - Cypress Semiconductor
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Fabricante
CY22801 Datasheet PDF : 7 Pages
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CY22801
Absolute Maximum Conditions
Parameter
VDD
TS
TJ
VIO
ESD
Description
Supply Voltage
Storage Temperature
Junction Temperature
Input and Output Voltage
Electro-Static Discharge Voltage per MIL-STD-833, Method 3015
Min
–0.5
–65
–
VSS – 0.5
2000
Max
4.6
150
125
VDD + 0.5
–
Unit
V
°C
°C
V
V
Recommended Operating Conditions
Parameter
VDD
TA
CLOAD
tPU
Description
Operating Voltage
Ambient Temperature, Commercial Grade
Ambient Temperature, Industrial Grade
Max. Load Capacitance on the CLK output
Power up time for VDD to reach minimum specified voltage
(power ramps must be monotonic)
Min Typ Max Unit
3.14
3.3 3.47
V
0
–
70
°C
–40
--
85
°C
–
–
15
pF
0.05
–
500 ms
Recommended Crystal Specifications
Parameter
FNOM
CLNOM
R1
DL
Name
Description
Nominal Crystal Frequency Parallel resonance, fundamental mode,
and AT cut
Nominal Load Capacitance
Equivalent Series Resistance Fundamental mode
(ESR)
Crystal Drive Level
No external series resistor assumed
Min Typ Max Unit
8
–
30 MHz
6
–
30
pF
–
35
50
Ω
–
0.5
2
mW
DC Electrical Specifications[2]
Parameter
IOH
IOL
VIH
VIL
CIN1
CIN2
IDD[3, 4]
Name
Output High Current
Output Low Current
Input High Voltage
Input Low Voltage
Input Capacitance
Input Capacitance
VDD Supply Current
Description
VOH = VDD – 0.5, VDD = 3.3V (source)
VOL = 0.5, VDD = 3.3V (sink)
All input pins except XIN and XOUT
XIN and XOUT pins
Min Typ Max Unit
12
24
–
mA
12
24
–
mA
0.7*VDD – VDD + 0.3 V
VSS – 0.3 – 0.3*VDD V
–
–
7
pF
–
24
–
pF
–
70
–
mA
Notes
2. Not 100% tested, guaranteed by design.
3. IDD current specified for three CLK outputs running at 100 MHz.
4. Use CyClocksRT to calculate actual IDD for specific output frequency configurations.
Document #: 001-15571 Rev. *B
Page 4 of 7
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