CY22800 Ver la hoja de datos (PDF) - Cypress Semiconductor
Número de pieza
componentes Descripción
Fabricante
CY22800 Datasheet PDF : 8 Pages
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CY22800
Absolute Maximum Conditions
Parameter
VDD
TS
TJ
Description
Supply Voltage
Storage Temperature
Junction Temperature
Digital Inputs
Digital Outputs referred to VDD
Electro-Static Discharge
Min.
–0.5
–65
–
VSS – 0.3
VSS – 0.3
2
Max. Unit
4.6
V
125
°C
125
°C
VDD + 0.3 V
VDD + 0.3 V
–
kV
Recommended Operating Conditions
Parameter
VDD
TA
CLOAD
fREF[3]
tPU
Description
Operating Voltage
Ambient Temperature
Max. Load Capacitance on the CLK output
Reference Frequency
Power-up time for all VDDs to reach minimum specified voltage (power ramps
must be monotonic)
Min.
3.14
0
–
0.5
0.05
Typ.
3.3
–
–
–
–
Max.
3.47
70
15
100
500
Unit
V
°C
pF
MHz
ms
Pullable Crystal Specifications for VCXO Application ONLY
Parameter
CLNOM
R1
R3/R1
DL
F3SEPHI
F3SEPLO
C0
C0/C1
C1
Name
Crystal Load Capacitance
Equivalent Series Resistance
Ratio of Third Overtone Mode ESR to Fundamental Mode ESR. Ratio used
because typical R1 values are much less than the maximum spec
Crystal Drive Level. No external series resistor assumed
Third overtone separation from 3*FNOM (High Side)
Third overtone separation from 3*FNOM (Low Side)
Crystal shunt capacitance
Ratio of Shunt to motional capacitance
Crystal motional capacitance
Min. Typ. Max. Unit
–
14
– pF
–
–
25 Ω
3
–
–
–
–
0.5
2 mW
300
–
– ppm
–
– –150 ppm
7 pF
180
–
250
14.4 18 21.6 pF
Recommended Crystal Specifications for ALL other Applications
Parameter
Name
FNOM
Nominal Crystal Frequency
CLNOM
R1
DL
Nominal Load Capacitance
Equivalent Series Resistance
(ESR)
Crystal Drive Level
Description
Parallel resonance, fundamental mode, and
AT cut
Fundamental mode
Min.
8
–
–
Typ.
–
12
35
Max. Unit
30 MHz
– pF
50 Ω
No external series resistor assumed
–
0.5
2 mW
Note
3. Configuration dependent, see the one-page document.
Document #: 001-07704 Rev. **
Page 5 of 8
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