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CY22388 Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza
componentes Descripción
Fabricante
CY22388 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CY22388/89/91
Absolute Maximum Conditions
Parameter
Description
VDD/AVDD/VDDL Core Supply Voltage
VIN
Input Voltage
TS
Temperature, Storage
ESDHBM
ESD Protection (Human Body Model)
UL-94
Flammability Rating
MSL
Moisture Sensitivity Level
Condition
Relative to VSS
Non-Functional
MIL-STD-883, Method 3015
V-0 @1/8 in.
QFN package
16- and 20-pin TSSOP
Min.
–0.5
–0.5
–65
2000
Max.
4.6
VDD + 0.5
+125
10
3
1
Unit
V
VDC
°C
Volts
ppm
Pullable Crystal Specifications[1, 3]
Parameter
FNOM
CLNOM
R1
DL
C0[2]
C1[2]
F3SEPHI[3]
F3SEPLO[3]
Description
Comments
Min. Typ. Max. Unit
13.5-MHz and 27-MHz Crystal AT-Cut Parallel resonance, Fundamental
mode
See Note 3
Nominal Load Capacitance
Order crystal at one specific CLNOM 11.4 12 12.6 pF
0 ppm
Equivalent Series Resistance (ESR) Fundamental mode (CL = Series)
40
Crystal Drive Level
Nominal VDD @ 25C over ±120 PPM
Pull Range
300 W
Crystal Shunt Capacitance
1.5
3
4.0 pF
Crystal Motional Capacitance
12 14 16.8 fF
Third Overtone Separation from
3*FNOM
Third Overtone Separation from
3*FNOM
Mechanical Third (High side of
3*FNOM)
Mechanical Third (Low side of
3*FNOM)
240
ppm
– –120 ppm
Recommended Operating Conditions
Parameter
Description
VDD/AVDD/VDDL Operating Voltage
TA
Ambient Temperature
CLOAD
Maximum Load Capacitance
tPU
Power-up time for all VDDs reach minimum specified voltage (power ramps
must be monotonic)
Min. Typ. Max. Unit
3.0 3.3 3.6 V
–10 – 70 °C
– – 15 pF
0.05 500 ms
Notes
1. Device operates to the following specs, which are guaranteed by design.
2. Increased tolerance available from pull range less than ±120PPM.
3. Refer to CY22388 Application Note and online software for a list of Approved Crystal Specifications.
Document #: 38-07734 Rev. *B
Page 5 of 10
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