CY14B256L-ZS25XI Ver la hoja de datos (PDF) - Cypress Semiconductor

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componentes Descripción

Fabricante

CY14B256L-ZS25XI

256-Kbit (32 K × 8) nvSRAM

Cypress Semiconductor 

CY14B256LA

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................–65 C to +150 C

Maximum accumulated storage time:

At 150 C ambient temperature ....................... 1000 h

At 85 C ambient temperature ..................... 20 years

Ambient temperature

with power applied ...................................–55 C to +150 C

Supply voltage on VCC relative to Vss ........... –0.5 V to 4.1 V

Voltage applied to outputs

in high Z state ......................................–0.5 V to VCC + 0.5 V

Input voltage ....................................... –0.5 V to VCC + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ................. –2.0 V to VCC + 2.0 V

Package power dissipation

capability (TA = 25 °C) ..................................................1.0 W

Surface mount Pb soldering

temperature (3 seconds) ..........................................+260 C

DC output current (1 output at a time, 1s duration) .....15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) .......................... > 2001 V

Latch-up current ................................................... > 200 mA

Operating Range

Range

Industrial

Ambient Temperature

–40 C to +85 C

VCC

2.7 V to 3.6 V

DC Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

VCC

ICC1

ICC2

ICC3

ICC4

ISB

IIX[10]

IOZ

VIH

VIL

VOH

VOL

Power supply

Average VCC current

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

Average VCC current during STORE All inputs don’t care, VCC = Max

Average current for duration tSTORE

Average VCC current at

tRC= 200 ns, VCC(Typ), 25 °C

All inputs cycling at CMOS levels.

Values obtained without output loads

(IOUT = 0 mA).

Average VCAP current during

AutoStore cycle

All inputs don’t Care. Average current for

duration tSTORE

VCC standby current

CE > (VCC – 0.2 V).

VIN < 0.2 V or > (VCC – 0.2 V).

Standby current level after nonvolatile

cycle is complete.

Inputs are static. f = 0 MHz.

Input leakage current (except HSB)

Input leakage current (for HSB)

Off-state output leakage current

Input HIGH voltage

VCC = Max, VSS < VIN < VCC

VCC = Max, VSS < VIN < VCC

VCC = Max, VSS < VOUT < VCC,

CE or OE > VIH or WE < VIL

Input LOW voltage

Output HIGH voltage

Output LOW voltage

IOUT = –2 mA

IOUT = 4 mA

Min

2.7

–

–

–

–

–

–1

–100

–1

2.0

Vss – 0.5

2.4

–

Typ [9]

3.0

–

Max

3.6

70

52

–

10

35

–

–

5

–

5

–

+1

–

+1

–

+1

– VCC + 0.5

–

0.8

–

–

0.4

Unit

V

mA

mA

mA

mA

mA

mA

A

A

A

V

V

V

V

Notes

9. Typical values are at 25 °C, VCC= VCC(Typ). Not 100% tested.

10.

The HSB pin

parameter is

chhaasraIOcUteTri=ze–d2

µA

but

for

not

VteOsHteodf.

2.4

V

when

both

active

high

and

low

drivers

are

disabled.

When

they

are

enabled

standard

VOH

and

VOL

are

valid.

This

Document Number: 001-54707 Rev. *I

Page 8 of 22

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