CY14B256L-SP25XC Ver la hoja de datos (PDF) - Cypress Semiconductor

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Fabricante

CY14B256L-SP25XC

256 Kbit (32K x 8) nvSRAM

Cypress Semiconductor 

CY14B256L

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage on VCC Relative to GND ..........–0.5V to 4.1V

Voltage Applied to Outputs

in High Z State ....................................... –0.5V to VCC + 0.5V

Input Voltage...........................................–0.5V to Vcc + 0.5V

Transient Voltage (<20 ns) on

Any Pin to Ground Potential .................. –2.0V to VCC + 2.0V

Package Power Dissipation

Capability (TA = 25°C) ................................................... 1.0W

Surface Mount Lead Soldering

Temperature (3 Seconds) .......................................... +260°C

DC output Current (1 output at a time, 1s duration) .... 15 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch Up Current ................................................... > 200 mA

Operating Range

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

-40°C to +85°C

VCC

2.7V to 3.6V

2.7V to 3.6V

DC Electrical Characteristics

Over the operating range (VCC = 2.7V to 3.6V) [4]

Parameter

Description

Test Conditions

ICC1

Average VCC Current tRC = 25 ns

tRC = 35 ns

tRC = 45 ns

Dependent on output loading and cycle rate.

Values obtained without output loads.

IOUT = 0 mA.

Commercial

Industrial

ICC2

Average VCC Current All Inputs Do Not Care, VCC = Max

during STORE

Average current for duration tSTORE

ICC3

Average VCC Current at WE > (VCC – 0.2V). All other inputs cycling.

tRC= 200 ns, 5V, 25°C Dependent on output loading and cycle rate. Values obtained

Typical

without output loads.

ICC4

Average VCAP Current All Inputs Do Not Care, VCC = Max

during AutoStore Cycle Average current for duration tSTORE

ISB

VCC Standby Current CE > (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V).

Standby current level after nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

IIX

Input Leakage Current VCC = Max, VSS < VIN < VCC

IOZ

Off State Output

VCC = Max, VSS < VIN < VCC, CE or OE > VIH or WE < VIL

Leakage Current

VIH

Input HIGH Voltage

VIL

VOH

VOL

VCAP

Input LOW Voltage

Output HIGH Voltage

Output LOW Voltage

Storage Capacitor

IOUT = –2 mA

IOUT = 4 mA

Between VCAP pin and Vss, 6V rated.

Data Retention and Endurance

Parameter

DATAR

NVC

Description

Data Retention at 55°C

Nonvolatile STORE Operations

Min

Max Unit

65 mA

55 mA

50

70 mA

60 mA

55 mA

3 mA

10 mA

3 mA

3 mA

-1

+1 μA

-1

+1 μA

2.0

VCC + V

0.5

VSS – 0.5 0.8

V

2.4

V

0.4

V

17

120 uF

Min

Unit

20

Years

200

K

Note

4. The HSB pin has IOUT = –10 μA for VOH of 2.4 V. This parameter is characterized but not tested.

Document Number: 001-06422 Rev. *H

Page 7 of 18

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