CY14B104LA-BA45XI(2011) Ver la hoja de datos (PDF) - Cypress Semiconductor
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Fabricante
CY14B104LA-BA45XI Datasheet PDF : 24 Pages
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CY14B104LA, CY14B104NA
Data Retention and Endurance
DATAR
NVC
Parameter
Description
Data retention
Nonvolatile STORE operations
Capacitance
In the following table, the capacitance parameters are listed.[14]
Parameter
Description
CIN
Input capacitance (except BHE, BLE and HSB)
Input capacitance (for BHE, BLE and HSB)
COUT
Output capacitance (except HSB)
Output capacitance (for HSB)
Min
20
1,000
Unit
Years
K
Test Conditions
TA = 25 °C, f = 1 MHz,
VCC = VCC (Typ)
Max
Unit
7
pF
8
pF
7
pF
8
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed. [14]
Parameter
Description
ΘJA Thermal resistance
(Junction to ambient)
ΘJC Thermal resistance
(Junction to case)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
48-FBGA
28.82
7.84
44-TSOP II 54-TSOP II Unit
31.11
30.73 °C/W
5.56
6.08 °C/W
Figure 5. AC Test Loads
3.0 V
OUTPUT
30 pF
577 Ω
R1
R2
789 Ω
3.0 V
OUTPUT
5 pF
577 Ω
R1
for tristate specs
R2
789 Ω
AC Test Conditions
Input pulse levels.................................................... 0 V to 3 V
Input rise and fall times (10% - 90%) ........................... <3 ns
Input and output timing reference levels ....................... 1.5 V
Note
14. These parameters are guaranteed by design but not tested.
Document #: 001-49918 Rev. *H
Page 10 of 24
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