CY14B101LA-BA25XI Ver la hoja de datos (PDF) - Cypress Semiconductor

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Fabricante

CY14B101LA-BA25XI

1-Mbit (128 K × 8/64 K × 16) nvSRAM

Cypress Semiconductor 

CY14B101LA

CY14B101NA

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65 C to +150 C

Maximum accumulated storage time:

At 150 C ambient temperature ...................... 1000 h

At 85 C ambient temperature .................... 20 Years

Maximum junction temperature ................................. 150 C

Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V

Voltage applied to outputs

in High Z state .................................... –0.5 V to VCC + 0.5 V

Input voltage ....................................... –0.5 V to VCC + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ................. –2.0 V to VCC + 2.0 V

Package power dissipation

capability (TA = 25 °C) ................................................. 1.0 W

Surface mount Pb soldering

temperature (3 Seconds) ......................................... +260 C

DC output current (1 output at a time, 1s duration) .... 15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) ......................... > 2001 V

Latch up current .................................................... > 200 mA

Operating Range

Range

Industrial

Ambient Temperature

–40 C to +85 C

VCC

2.7 V to 3.6 V

DC Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

Min Typ [19] Max Unit

VCC

ICC1

ICC2

ICC3

ICC4

ISB

IIX[20]

Power supply voltage

2.7

3.0

3.6

V

Average VCC current

tRC = 20 ns

–

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

Average VCC current during

All inputs don’t care, VCC = Max

–

STORE

Average current for duration tSTORE

Average VCC current at

All inputs cycling at CMOS levels.

–

tRC = 200 ns, VCC(Typ), 25 °C Values obtained without output loads

(IOUT = 0 mA)

Average VCAP current during All inputs don’t care. Average current for

–

AutoStore cycle

duration tSTORE

VCC standby current

CE > (VCC – 0.2 V).

–

VIN < 0.2 V or > (VCC – 0.2 V).

Standby current level after nonvolatile cycle

is complete.

Inputs are static. f = 0 MHz

–

70

mA

70

mA

52

mA

–

10

mA

35

–

mA

–

5

mA

–

5

mA

Input leakage current (except

HSB)

VCC = Max, VSS < VIN < VCC

–1

–

+1

µA

Input leakage current (for HSB) VCC = Max, VSS < VIN < VCC

–100

–

+1

µA

IOZ

Off-state output leakage current VCC = Max, VSS < VOUT < VCC,

–1

–

+1

µA

CE or OE > VIH or BHE/BLE > VIH or WE < VIL

VIH

Input HIGH voltage

2.0

– VCC + 0.5 V

VIL

Input LOW voltage

VSS – 0.5 –

0.8

V

VOH

Output HIGH voltage

IOUT = –2 mA

2.4

–

–

V

VOL

Output LOW voltage

IOUT = 4 mA

–

–

0.4

V

Notes

19. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.

20. The HSB pin has IOUT = -2 µA for VOH of 2.4 V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

Document Number: 001-42879 Rev. *P

Page 9 of 30

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