CY14B101K(RevE) Ver la hoja de datos (PDF) - Cypress Semiconductor
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CY14B101K Datasheet PDF : 24 Pages
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PRELIMINARY
CY14B101K
Device Operation
The CY14B101K nvSRAM is made up of two functional
components paired in the same physical cell, a SRAM memory
cell and a nonvolatile QuantumTrap cell. The SRAM memory
cell operates as a standard fast static RAM. Transfer of the
data can be from the SRAM to the nonvolatile cell (the STORE
operation), or from the nonvolatile cell to SRAM (the RECALL
operation). This unique architecture allows all cells to be
stored and recalled in parallel. During the STORE and
RECALL operations SRAM READ and WRITE operations are
inhibited. The CY14B101K supports infinite reads and writes
just like a typical SRAM. In addition, it provides infinite
RECALL operations from the nonvolatile cells and up to
200,000 STORE operations.
SRAM READ
The CY14B101K performs a READ cycle whenever CE and
OE are low, while WE and HSB are high. The address
specified on pins A0-16 determines which of the 131,072 data
bytes will be accessed. When the READ is initiated by an
address transition, the outputs will be valid after a delay of tAA
(READ cycle 1). If the READ is initiated by CE or OE, the
outputs will be valid at tACE or at tDOE, whichever is later
(READ cycle 2). The data outputs repeatedly responds to
address changes within the tAA access time without the need
for transitions on any control input pins. It remains valid until
another address change, or until CE or OE is brought high, or
WE or HSB is brought low.
SRAM WRITE
A WRITE cycle is performed whenever CE and WE are low
and HSB is high. The address inputs must be stable before
entering the WRITE cycle and must remain stable until either
CE or WE goes high, at the end of the cycle. The data on the
common IO pins DQ0–7 will be written into the memory if the
data is valid tSD before the end of a WE-controlled WRITE or
before the end of an CE-controlled WRITE. It is recommended
that OE be kept high during the entire WRITE cycle to avoid
data bus contention on common IO lines. If OE is left low,
internal circuitry turns off the output buffers tHZWE after WE
goes low.
AutoStore Operation
The CY14B101K stores data to nvSRAM using one of three
storage operations. These three operations are Hardware
Store activated by HSB, Software Store activated by an
address sequence, and AutoStore on device power down.
AutoStore operation is a unique feature of QuantumTrap
technology and is enabled by default on the CY14B101K.
During normal operation, the device draws current from VCC
to charge a capacitor connected to the VCAP pin. This stored
charge will be used by the chip to perform a single STORE
operation. If the voltage on the VCC pin drops below VSWITCH,
the part automatically disconnects the VCAP pin from VCC. A
STORE operation will be initiated with power provided by the
VCAP capacitor.
Figure 1 shows the proper connection of the storage capacitor
(VCAP) for automatic store operation. Refer to the Table , “DC
Electrical Characteristics,” on page 14 for the size of VCAP.
Figure 1. AutoStore Mode
VCAP
VCC
VCC
WE
The voltage on the VCAP pin is driven to 5V by a charge pump
internal to the chip. A pull up must be placed on WE to hold it
inactive during power up.
To reduce unnecessary nonvolatile stores, AutoStore and
Hardware Store operations will be ignored unless at least one
WRITE operation has taken place since the most recent
STORE or RECALL cycle. Software initiated STORE cycles
are performed regardless of whether a WRITE operation has
taken place. Monitor the HSB signal by the system to detect if
an AutoStore cycle is in progress.
Hardware STORE (HSB) Operation
The CY14B101K provides the HSB pin for controlling and
acknowledging the STORE operations. Use the HSB pin to
request a hardware STORE cycle. When the HSB pin is driven
low, the CY14B101K conditionally initiates a STORE operation
after tDELAY. An actual STORE cycle only begins if a WRITE to
the SRAM took place since the last STORE or RECALL cycle.
The HSB pin also acts as an open drain driver that is internally
driven low to indicate a busy condition while the STORE
(initiated by any means) is in progress.
SRAM READ and WRITE operations that are in progress
when HSB is driven low by any means are given time to
complete before the STORE operation is initiated. After HSB
goes low, the CY14B101K continues SRAM operations for
tDELAY. During tDELAY, multiple SRAM READ operations may
take place. If a WRITE is in progress when HSB is pulled low
it will be allowed a time, tDELAY, to complete. However, any
SRAM WRITE cycles requested after HSB goes low will be
inhibited until HSB returns high.
During any STORE operation, regardless of how it was
initiated, the CY14B101K continues to drive the HSB pin low,
releasing it only when the STORE is complete. Upon
completion of the STORE operation the CY14B101K remains
disabled until the HSB pin returns high. Leave the HSB
unconnected if it is not used.
Document #: 001-06401 Rev. *E
Page 3 of 24
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