CXT5551E Ver la hoja de datos (PDF) - Central Semiconductor
Número de pieza
componentes Descripción
Fabricante
CXT5551E Datasheet PDF : 2 Pages
| |||
CXT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551E
is an NPN Silicon Transistor, packaged in an
SOT-89 case, designed for general purpose
amplifier applications requiring high breakdown
voltage.
MARKING CODE: FULL PART NUMBER
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
• Low Saturation Voltage 100mV Max @ 50mA
• Complementary Device CXT5401E
• SOT-89 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ΘJA
250
220
6.0
600
1.2
-65 to +150
104
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
♦ BVCBO
IC=100μA
250
♦ BVCEO
IC=1.0mA
220
BVEBO
IE=10μA
6.0
♦ VCE(SAT)
IC=10mA, IB=1.0mA
♦ VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦ Enhanced Specification
MAX
50
50
50
75
100
1.00
1.00
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R0 (10-May 2006)
Share Link: 