CXK5V8257BM Ver la hoja de datos (PDF) - Sony Semiconductor

Número de pieza

componentes Descripción

Fabricante

CXK5V8257BM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5V8257BTM/BYM/BM

Electrical Characteristics

• DC characteristics

(VCC = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)

Item

Symbol

Test Conditions

Min. Typ.∗1 Max. Unit

Input leakage current ILI

VIN = GND to VCC

–0.5 — 0.5 µA

Output leakage

current

ILO

CE = VIH,

OE = VIH or WE = VIL,

VI/O = GND to VCC

–0.5 — 0.5 µA

Operating power

supply current

ICC1

Average operating

current

ICC2

ISB1

Standby current

ISB2

Output high

voltage

VOH

Output low

voltage

VOL

∗1 VCC = 3.3V, Ta = 25°C

CE = VIL,

VIN = VIH or VIL,

IOUT = 0mA

Min. cycle,

Duty = 100%, IOUT = 0mA

CE ≥ VCC – 0.2V

CE = VIH

70LL

10LL

0 to +70°C

0 to +40°C

+25°C

IOH = –2mA

IOL = 2.0mA

— 0.9

2 mA

—

21

40

mA

—

18

35

—

— 3.5

—

—

0.7 µA

— 0.12 0.35

— 0.06 0.7 mA

2.4

—

—V

—

— 0.4 V

I/O capacitance

(Ta = 25°C, f = 1MHz)

Item

Symbol Test condition Min. Typ. Max. Unit

Input capacitance CIN

I/O capacitance CI/O

VIN = 0V

VI/O = 0V

—

—

8

pF

—

—

10 pF

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 3.3V ± 0.3V, Ta = 0 to +70°C)

Item

Conditions

Input pulse high level

VIH = 2.0V

Input pulse low level

Input rise time

Input fall time

VIL = 0.8V

tr = 5ns

tf = 5ns

Input and output reference level 1.4V

Output load

conditions

-70LL

-10LL

CL∗2 = 30pF, 1TTL

CL∗2 = 100pF, 1TTL

∗2 CL includes scope and jig capacitances.

–3–

TTL

CL

Share Link: