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Número de pieza
componentes Descripción
CXK5T8257BTM-12LLX Ver la hoja de datos (PDF) - Sony Semiconductor
Número de pieza
componentes Descripción
Fabricante
CXK5T8257BTM-12LLX
32768-word × 8-bit High Speed CMOS Static RAM
Sony Semiconductor
CXK5T8257BTM-12LLX Datasheet PDF : 10 Pages
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Data Retention Waveform
•
Low supply voltage data retention waveform
V
CC
2.7V
2.2V
V
DR
CE
GND
t
CDRS
Data retention mode
CE
≥
V
CC
– 0.2V
CXK5T8257BTM/BYM/BM
t
R
Data Retention Characteristics
Item
Symbol
Test conditions
Data retention voltage V
DR
CE
≥
V
CC
– 0.2V
I
CCDR1
V
CC
= 3.0V
CE
≥
2.8V
Data retention current
–25 to +85°C
–25 to +70°C
+25°C
I
CCDR2
V
CC
= 2.0 to 3.6V
CE
≥
V
CC
– 0.2V
Data retention
setup time
Recovery time
t
CDRS
t
R
Chip disable to data
retention mode
∗
1
V
CC
= 3.3V, Ta = 25°C
(Ta = –25 to +85°C)
Min. Typ. Max. Unit
2
—
3.6 V
—
—
6
—
—
3
—
0.1
—
µA
— 0.12
∗
1
7.0
0
—
— ns
5
—
— ms
–8–
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