CXK5T8257BTM Ver la hoja de datos (PDF) - Sony Semiconductor

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componentes Descripción

Fabricante

CXK5T8257BTM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5T8257BTM/BYM/BM

I/O capacitance

Item

Input capacitance

I/O capacitance

Symbol Test condition

CIN

VIN = 0V

CI/O

VI/O = 0V

Min.

—

—

Note) This parameter is sampled and is not 100% tested.

(Ta = 25°C, f = 1MHz)

Typ. Max. Unit

—

8 pF

—

10 pF

AC Characteristics

• AC test conditions

(Ta = –25 to +85°C)

Item

Conditions

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Input pulse high level

VIH = 2.4V

VIH = 2.2V

Input pulse low level

VIL = 0.4V

VIL = 0.6V

Input rise time

tr = 5ns

tr = 5ns

Input fall time

tf = 5ns

tf = 5ns

Input and output reference level 1.4V

1.4V

-10LLX

Output load conditions

-12LLX

CL∗1 = 100pF, 1TTL CL∗1 = 30pF, 1TTL

CL∗1 = 100pF, 1TTL CL∗1 = 100pF, 1TTL

∗1 CL includes scope and jig capacitances.

TTL

CL

–4–

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