CXK5T8257BTM Ver la hoja de datos (PDF) - Sony Semiconductor

Número de pieza

componentes Descripción

Fabricante

CXK5T8257BTM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5T8257BTM/BYM/BM

DC Recommended Operating Conditions

Item

Symbol

VCC = 2.7 to 3.6V

Min.

Typ.

Max.

Supply voltage

VCC

2.7

3.3

3.6

Input high voltage

VIH

Input low voltage

VIL

2.4

–0.3∗1

—

VCC + 0.3

—

0.4

∗1 VIL=–3.0V Min. for pulse width less than 50ns.

(Ta = –25 to +85°C, GND = 0V)

VCC = 3.3V ± 0.3V

Unit

Min.

Typ.

Max.

3.0

2.2

–0.3∗1

3.3

3.6

—

VCC + 0.3 V

—

0.6

Electrical Characteristics

• DC characteristics

Item

Symbol

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

Test Conditions

Min. Typ.∗2 Max. Unit

Input leakage current ILI

VIN = GND to VCC

–0.5 — 0.5

Output leakage

current

ILO

CE = VIH

OE = VIH or WE = VIL

VI/O = GND to VCC

–0.5 —

0.5 µA

Operating power

supply current

ICC1

Average operating

current

ICC2

CE = VIL

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

duty = 100%, IOUT = 0mA

ISB1

CE ≥ VCC – 0.2V

Standby current

ISB2

CE = VIH

Output high

voltage

VOH IOH = –2mA

Output low

voltage

VOL IOL = 2.0mA

∗2 VCC = 3.3V, Ta = 25°C

∗3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

10LLX

12LLX

–25 to +85°C

–25 to +70°C

+25°C

— 0.9

2

mA

—

18∗3 35∗4

—

18

35

—

— 7.0

—

— 3.5 µA

— 0.12 —

— 0.06 0.7 mA

2.4

—

—

V

—

— 0.4

–3–

Share Link: