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componentes Descripción

Fabricante

CXK58512M

65536-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK58512TM/M

Electrical Characteristics

• DC Characteristics

Item

Symbol

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

Test conditions

Min. Typ.∗ Max. Unit

Input leakage current

ILI

VIN = GND to VCC

–1

—

+1 µA

Output leakage current

ILO

CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

+1 µA

Operating power supply

current

ICC1

CE1 = VIL, CE2 = VIH

VIN = VIH or VIL

IOUT = 0mA

—

7

15 mA

Min. cycle

ICC2

duty = 100%

IOUT = 0mA

-55LL

-70LL

-10LL

—

45

90

—

40

70 mA

—

35

60

Average operating current

ICC3

Cycle time 1µs

duty = 100%

IOUT = 0mA

CE1 ≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

—

10

20 mA

Standby current

CE2 0.2V

0 to +70°C —

—

10

ISB1

oor

CE1 ≥ Vcc – 0.2V 0 to +40°C

CE2 ≥ Vcc – 0.2V +25°C

—

—

—

0.4

2 µA

1

ISB2

CE1 = VIH or CE2 = VIL

—

0.6

3 mA

Output high voltage

VOH

IOH = –1.0mA

2.4

—

—

V

Output low voltage

∗ VCC = 5V, Ta = 25°C

VOL

IOL = 2.1mA

—

—

0.4 V

–3–

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