CXK581000AM Ver la hoja de datos (PDF) - Sony Semiconductor

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CXK581000AM

131072-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data Retention Waveform

• Low supply voltage data retention waveform (1) : CE1 control

tCDRS

Data retention mode

tR

VCC

4.5V

2.2V

VDR

CE1

GND

CE1 ≥ VCC – 0.2V

• Low supply voltage data retention waveform (2) : CE2 control

VCC

4.5V

CE2

VDR

Data retention mode

tCDRS

tR

0.4V

GND

CE2 ≤ 0.2V

CXK581000ATM/AYM/AM/AP

Data Retention Characteristics

(Ta = 0 to +70°C)

Item

Data retention voltage

Data retention current

Data retention setup

time

Recovery time

Symbol

Test conditions

Min.

VDR

∗1

2.0

0 to +70°C —

LL∗2 0 to +40°C —

ICCDR1 VCC = 3.0V∗1

+25°C

—

0 to +70°C —

SL∗3 0 to +40°C —

+25°C

—

ICCDR2

VCC = 2.0V to 5.5V∗1

LL∗2

SL∗3

—

—

tCDRS Chip disable to data retention mode

0

tR

5

Note)

∗1 CE1 ≥ VCC – 0.2V, CE2 ≥ VCC – 0.2V [CE1 Control] or CE2 ≤ 0.2V [CE2 Control]

∗2 For -55LL/70LL/10LL

∗3 For -55SL/70SL/10SL

Typ.

—

—

—

0.4

—

—

0.15

0.7

0.3

Max. Unit

5.5 V

12

2.4

1.2

4

µA

0.8

0.3

20

12

— — ns

— — ms

–8–

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