CXK581000AM Ver la hoja de datos (PDF) - Sony Semiconductor

Número de pieza

componentes Descripción

Fabricante

CXK581000AM

131072-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK581000ATM/AYM/AM/AP

Electrical Characteristics

• DC Characteristics

(VCC = 5V ±10%, GND = 0V, Ta = 0 to = +70°C)

Item

Symbol

Test conditions

Input leakage current ILI VIN = GND to VCC

Min. Typ.∗1 Max. Unit

–1

—

1

Output leakage current

ILO

CE1 = VIH or CE2 = VIL or OE = VIH

or WE = VIL, VI/O = GND to VCC

–1

—

1 µA

Operating power

supply current

CE1 = VIL, CE2 = VIH

ICC1 VIN = VIH or VIL

IOUT = 0mA

Min. cycle

ICC2 Duty = 100%

IOUT = 0mA

55LL/55SL

70LL/70SL

10LL/10SL

Average operating

current

Cycle time 1µs

duty = 100%

IOUT = 0mA

ICC3 CE1 ≤ 0.2V

CE2 ≥ VCC – 0.2V

VIL ≤ 0.2V

VIH ≥ VCC – 0.2V

—

7

15

—

45

90

—

40

70

—

35

60

mA

—

10

20

Standby current

CE2 ≤ 0.2V

LL∗2

ISB1

{or CE1 ≥ VCC – 0.2V

CE2 ≥ VCC – 0.2V

SL∗3

ISB2

Output high

VOH

voltage

Output low

VOL

voltage

∗1 VCC = 5V, Ta = 25°C

∗2 For -55LL/70LL/10LL

∗3 For -55SL/70SL/10SL

CE1 = VIH or CE2 = VIL

IOH = –1.0mA

IOL = 2.1mA

0 to +70°C

0 to +40°C

+25°C

0 to +70°C

0 to +40°C

+25°C

—

—

20

—

—

4

— 0.7

2 µA

—

—

12

—

— 2.4

— 0.3

1

— 0.6

3 mA

2.4 —

—

V

—

— 0.4

–3–

Share Link: