CURM101-G Ver la hoja de datos (PDF) - ComChip

Número de pieza

componentes Descripción

Fabricante

CURM101-G

SMD Ultra Fast Recovery Rectifiers

ComChip 

SMD Ultra Fast Recovery Rectifiers

Rating and Characteristic Curves (CURM101-G Thru CURM107-G)

Fig.1 - Typical Forward Characteristics

10

1.0

Fig. 2 - Typical Forward Current Derating Curve

1.4

1.2

1.0

0.1

0.01

0.001

Tj=25 C

Pulse width 300uS

4% duty cycle

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Forward Voltage (V)

0.8

0.6

Single Phase

0.4

Half Wave 60Hz

0.2

00

25 50 75 100 125 150 175

Ambient Temperature ( °C)

Fig. 3 - Test Circuit Diagram and Reverse Recovery

Time Characteristics

50W

NONINDUCTIVE

10W

NONINDUCTIVE

(+)

25Vdc

(approx.)

()

D.U.T.

1W

NON-

INDUCTIVE

OSCILLISCOPE

(NOTE 1)

()

PULSE

GENERATOR

(NOTE 2)

(+)

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

+0.5A

0

-0.25A

trr

|

|

|

|

|

|

|

|

-1.0A

1cm

SET TIME BASE FOR

50 / 10ns / cm

QW-BU007

Fig. 4 - Maximum Non-Repetitive Forward

Surge Current

30

8.3mS Single Half Sine

Wave JEDEC methode

24

18

Tj=25 °C

12

6

0

1

5 10

50 100

Number of Cycles at 60Hz

Fig.5 - Typical Junction Capacitance

175

120

=1MHz and applied

4VDC reverse voltage

100

80

60

40

20

0

0.01

0.1

1.0

10

100

Reverse Voltage, (V)

REV:B

Page 2

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