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2N2857CSM Datasheet PDF : 4 Pages
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SILICON RF SMALL SIGNAL
NPN TRANSISTOR
2N2857CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO (1)
Collector-Emitter
Breakdown Voltage
IC = 3mA
VCB = 15V
IB = 0
IE = 0
ICBO
Collector-Cut-Off Current
TA = 150°C
VCB = 30V
IE = 0
ICES
Collector-Cut-Off Current VCE = 16V
IB = 0
IEBO
Emitter-Cut-Off Current
VEB = 3V
IC = 0
hFE (1)
VCE(sat) (1)
VBE(sat) (1)
Forward-current transfer
ratio
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 3mA
IC = 10mA
IC = 10mA
VCE = 1.0V
TA = -55°C
IB = 1.0mA
IB = 1.0mA
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
hfe
Small Signal Current Gain
Ccb
rb’CC (2)
Collector – Base Feedback
Capacitance
Collector Base Time
Constant
Gpe (2)
Small Signal Power Gain
NF (2)
Noise Figure
IC = 5mA
f = 100MHz
IC = 2mA
f = 1.0KHz
VCB = 10V
f = 1.0MHz
IE = 2mA
f = 31.9MHz
VCE = 6V
f = 450MHz
VCE = 6V
f = 450MHz
VCE = 6V
VCE = 6V
IE = 0
VCB = 6V
IC = 1.5mA
IC = 1.5mA
RG = 50Ω
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) By design only, not a production test.
Min. Typ Max. Units
15
V
10
nA
1.0
µA
1.0
100
nA
10
µA
30
150
10
0.4
V
1.0
10
21
50
220
1.0
pF
4
15
ps
12.5
dB
4.5
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3339
Website: http://www.semelab-tt.com
Issue 5
Page 2 of 4
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