SI4542D Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SI4542D Datasheet PDF : 4 Pages
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January 2001
Si4542DY
30V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Power management
Features
• Q1: N-Channel
6 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V
RDS(on) = 35 mΩ @ VGS = 4.5V
• Q2: P-Channel
–6 A, –30 V
RDS(on) = 32 mΩ @ VGS = –10V
RDS(on) = 45 mΩ @ VGS = –4.5V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4542
Si4542DY
13”
Q1
Q2
30
–30
±20
±20
6
–6
20
–20
2
1.6
1.2
1
–55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2001 Fairchild Semiconductor International
Si4542DY Rev A
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