TBA820(1988) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TBA820 Datasheet PDF : 6 Pages
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TBA820M
ELECTRICAL CHARACTERISTICS (Refer to the test circuits Vs = 9V, Tamb = 25 °C unless otherwise
specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Vs
Supply voltage
3
16
V
Vo Quiescent output voltage (pin 5)
4
4.5
5
V
Id
Quiescent drain current
4
12
mA
Ib
Bias current (pin 3)
0.1
µA
Po Output power
d = 10%
f = 1 kHz
Rf = 120Ω
Vs = 12V
RL = 8Ω
2
W
Vs = 9V
RL = 4Ω
1.6
W
Vs = 9V
RL = 8Ω
0.9
1.2
W
Vs = 6V
RL = 4Ω
0.75
W
Vs = 3.5V
RL = 4Ω
0.25
W
Ri Input resistance (pin 3)
f = 1 kHz
5
MΩ
B
Frequency response (-3 dB)
RL = 8Ω
C5 = 1000 µF
Rf = 120Ω
CB = 680 pF
CB = 220 pF
25 to 7,000
Hz
25 to 20,000
d
Distortion
Po = 500 mW
RL = 8Ω
f = 1 kHz
Rf = 33Ω
Rf = 120Ω
0.8
%
0.4
Gv Voltage gain (open loop)
Gv Voltage gain (closed loop)
eN
iN
S+N
N
Input noise voltage (*)
Input noise current (*)
Signal to noise ratio (*)
f = 1 kHz
RL = 8Ω
f = 1 kHz
RL = 8Ω
Rf = 33Ω
Rf = 120Ω
Po = 1.2W
RL = 8Ω
Gv = 34 dB
R1 = 10KΩ
R1 = 50 kΩ
75
dB
45
dB
34
3
µV
0.4
nA
80
dB
70
SVR Supply voltage rejection
(test circuit of fig. 2)
RL = 8Ω
f(ripple) = 100 Hz
C6 = 47 µF
Rf = 120Ω
42
dB
(*) B = 22 Hz to 22 KHz
3/6
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