CPV362M4F Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

CPV362M4F

IGBT SIP MODULE Fast IGBT

International Rectifier 

CPV362M4F

9

2.63

8

Tc = 90°C

2.34

Tj = 125°C

7

P ow er Fac tor = 0.8

2.05

M odulation D epth = 1.15

6

V cc = 50% of R ated Voltage

1.75

5

1.46

4

1.17

3

0.88

2

0.58

1

0.29

0

0.00

0.1

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

100

TJ = 150 oC

10

TJ = 25 oC

VGE = 15V

20µs PULSE WIDTH

1

1

10

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

VCC = 50V

5µs PULSE WIDTH

1

5 6 7 8 9 10 11 12 13 14

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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