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CPD04

General Purpose Rectifier 500mA Glass Passivated Rectifier Chip

Central Semiconductor 

PROCESS CPD04

General Purpose Rectifier

500mA Glass Passivated Rectifier Chip

PROCESS DETAILS

Process

Die Size

Die Thickness

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

GLASS PASSIVATED MESA

26 x 26 MILS

8.5 MILS

14 x 14 MILS

Ni/Au - 5,000Å/2,000Å

Ni/Au - 5,000Å/2,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

18,000

PRINCIPAL DEVICE TYPES

1N645 thru 1N649

CBRHD-02 Series

w w w. c e n t r a l s e m i . c o m

R4 (22-March 2010)

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