CPC5603C Ver la hoja de datos (PDF) - Clare Inc => IXYS

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CPC5603C

N Channel Depletion Mode FET

Clare Inc => IXYS 

CPC5603C

N Channel Depletion Mode FET

Features

• Low on resistance 8 ohms

• Breakdown voltage 415V minimum

• High input impedance

• Low input and output leakage

• Small package size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

Applications

• Support Component for LITELINK™

Data Access Arrangement (DAA)

• Telecom

Description

The CPC5603C is an “N” channel depletion mode

Field Effect Transistor (FET) that utilizes Clare’s

proprietary third generation vertical DMOS process.

The third generation process realizes world

class, high voltage MOSFET performance in an

economical silicon gate process. The vertical DMOS

process yields a highly reliable device particularly

in difficult application environments such as

telecommunications.

One of the primary applications for the CPC5603C is

as a linear regulator/ hook switch for the LITELINK™

family of Data Access Arrangements (DAA) Devices

CPC5620A, CPC5621A, and CPC5622A.

The CPC5603C has a typical on-resistance of 8Ω, a

breakdown voltage exceeding 415V and is available

in an SOT-223 package. As with all MOS devices,

the FET structure prevents thermal runaway and

thermal-induced secondary breakdown.

Ordering Information

Part #

CPC5603C

Description

N-Channel Depletion Mode FET, SOT-223

Package (80/tube)

CPC5603CTR

N-Channel Depletion Mode FET, SOT-223

Package Tape and Reel (1000/reel)

DS-CPC5603C-R01.0

www.clare.com

Package Pinout

D

4

123

GDS

PIN # NAME

1

GATE

2 DRAIN

3 SOURCE

4 DRAIN

Pin #

1

2

3

4

Name

GATE

DRAIN

SOURCE

DRAIN

1

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