CMY213 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

CMY213

GaAs MMIC

Infineon Technologies 

GaAs Components

CMY 213

Typical Performance at Cellular Frequencies*

TA = 25 °C; VDD = 3 V, fRF = 850 MHz; fLO = 740 MHz; PLO = – 5 dBm;

fIF = 110 MHz; ZS = ZL = 50 Ω; unless otherwise specified

Parameter

Symbol

Limit Values

min. typ. max.

Total operating Current

(Mixer + IF amplifier)

IOP

–

8.0 9.5

Conversion Gain

SSB Noise Figure

RF Input -/ IF Output return loss

(external matching required)

GC

8.0

FSSB

–

RFIrl/IFOrl –

9.5 –

8

–

10 –

3rd Order Input Intercept Point

IIP3

8

10 –

LO-RF Isolation

Iso

–

10 –

Unit

mA

dB

dB

dB

dBm

dB

*Important Note:

During production, the RF performance at PCS frequencies is screened. The passed

devices also achieve the specified RF performance at cellular frequencies.

Test Conditions at PCS Frequencies

TA = 25 °C; VDD = 3 V, fRF = 1960 MHz; fLO = 1750 MHz; PLO = – 5 dBm;

fIF = 210 MHz; ZS = ZL = 50 Ω; unless otherwise specified

Parameter

Symbol

Limit Values

min. typ. max.

Total operating Current

(Mixer + IF amplifier)

IOP

–

8.0 9.5

Conversion Gain

SSB Noise Figure

RF Input -/ IF Output return loss

(external matching required)

GC

7

FSSB

–

RFIrl/IFOrl –

8.5 –

8.5 –

10 –

3rd Order Input Intercept Point

IIP3

10 12 –

LO-RF Isolation

Iso

–

6

–

Unit

mA

dB

dB

dB

dBm

dB

Data Sheet

3

2001-01-01

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