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CMS14(2006) Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
CMS14
(Rev.:2006)
Toshiba
Toshiba Toshiba
CMS14 Datasheet PDF : 5 Pages
1 2 3 4 5
TOSHIBA Schottky Barrier Diode
CMS14
CMS14
Switching Mode Power Supply Applications
(Output voltage: 12 V)
DC/DC Converter Applications
Unit: mm
Forward voltage: VFM = 0.58 V (max)
Average forward current: IF (AV) = 2.0 A
Repetitive peak reverse voltage: VRRM = 60 V
Suitable for compact assembly due to small surface-mount package
“MFLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
VRRM
IF (AV)
IFSM
Tj
Tstg
60
V
2.0 (Note 1) A
40 (50 Hz)
A
40~150
°C
40~150
°C
Note 1:
Note 2:
T= 112°C
Device mounted on a ceramic board
JEDEC
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
JEITA
Board thickness: 0.64 t
TOSHIBA
3-4E1A
Rectangular waveform (α = 180°), VR = 30 V
Using continuously under heavy loads (e.g. the application of
Weight: 0.023 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
VFM (1)
VFM (2)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-)
Test Condition
IFM = 1.0 A (pulse test)
IFM = 2.0 A (pulse test)
VRRM = 5 V (pulse test)
VRRM = 60 V (pulse test)
VR = 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
1
Min Typ. Max Unit
0.45
V
0.53 0.58
0.6
μA
25 200
77
pF
60
135 °C/W
210
16 °C/W
2006-11-13

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