CMOSH-4ETR Ver la hoja de datos (PDF) - Central Semiconductor

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CMOSH-4ETR

ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE

Central Semiconductor 

CMOSH-4E

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

SCHOTTKY DIODE

SOD-523 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMOSH-4E is an

enhanced version of the CMOSH-3 silicon Schottky

diode in an SOD-523 surface mount package.

MARKING CODE: 4E

ENHANCED SPECIFICATIONS:

♦ IF from 100mA MAX to 200mA MAX

♦ BVR from 30V MIN to 40V MIN

♦ VF from 1.0V MAX to 0.8V MAX

MAXIMUM RATINGS: (TA=25°C)

♦ Peak Repetitive Reverse Voltage

♦ Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=10ms

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IF

IFRM

IFSM

PD

TJ, Tstg

ΘJA

40

200

350

750

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

IR

VR=25V

90

IR

♦ BVR

VR=25V, TA=100°C

IR=100μA

25

40

50

VF

IF=2.0mA

0.29

♦ VF

IF=15mA

0.37

♦ VF

IF=100mA

0.51

♦♦ VF

IF=200mA

0.65

CJ

VR=1.0V, f=1.0MHz

7.0

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

♦ Enhanced specification.

♦♦ Additional Enhanced specification.

MAX

500

100

0.33

0.42

0.80

1.0

5.0

UNITS

V

mA

mA

mA

mW

°C

°C/W

UNITS

nA

μA

V

V

V

V

V

pF

ns

R5 (16-February 2016)

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