CMOSH-4E(2004) Ver la hoja de datos (PDF) - Central Semiconductor
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CMOSH-4E Datasheet PDF : 2 Pages
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CMOSH-4E
SURFACE MOUNT
ENHANCED SPECIFICATION
SILICON SCHOTTKY DIODE
SOD-523 CASE
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-4E
is an Enhanced version of the CMOSH-3 Silicon
Schottky Diode in an SOD-523 Surface Mount
Package.
ENHANCED SPECIFICATIONS:
♦ IF from 100 mA max to 200 mA max.
♦ BVR from 30V min to 40 V min.
♦ VF from 1.0 V max to 0.8 V max.
MARKING CODE: 4E
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
ΘJA
40
200
350
750
250
-65 to +150
500
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=25V
90
IR
♦BVR
VR=25V, TA=100°C
IR=100µA
25
40
50
VF
IF=2.0mA
0.29
♦VF
IF=15mA
0.37
♦VF
IF=100mA
0.61
♦♦VF
IF=200mA
0.65
CT
VR=1.0V, f=1 MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
MAX
500
100
0.33
0.42
0.80
1.0
5.0
UNITS
nA
µA
V
V
V
V
V
pF
ns
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R1 (24-May 2004)
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